? 1/8 table 1: main product characteristics damper modul. i f(av) 6 a 3 a v rrm 1500 v 600 v t rr (max) 125 ns 50 ns v f (max) 1.7 v 1.4 v dmv1500h damper + modulation diode for video 1 2 3 to-220fpab dmv1500hfd damper 123 modulation 1 2 3 to-220fpab f5 bending DMV1500HFD5 (optional) september 2004 rev. 1 features and benefits full kit in one package high breakdown voltage capability very fast recovery diode specified turn on switching characteristics low static and peak forward voltage drop for low dissipation insulated version: insulated voltage = 2000 v rms capacitance = 7 pf planar technology allowing high quality and best electrical characteristics outstanding performance of well proven dtv as damper and new faster turbo 2 600v technology as modulation description high voltage semiconductor especially designed for horizontal deflection stage in standard and high resolution video display with e/w correction. the insulated to-220fpab package includes both the damper diode and the modulation diode, thanks to a dedicated design. assembled on automated line, it offers very low dispersion values on insulating and thermal performanes. order codes part number marking dmv1500hfd dmv1500h DMV1500HFD5 dmv1500h obsolete product(s) - obsolete product(s)
dmv1500h 2/8 table 3: absolute maximum ratings table 4: thermal resistance table 5: static electrical characteristics pulse test: * tp = 5 ms, < 2% ** tp = 380 s, < 2% to evaluate the maximum conduction losses of the damper and modulation diodes use the following equations : damper: p = 1.35 x i f(av) + 0.59 x i f 2 (rms) modulation: p = 1.12 x i f(av) + 0.092 x i f 2 (rms) table 6: recovery characteristics symbol parameter value unit damper modul. v rrm repetitive peak reverse voltage 1500 600 v i fsm surge non repetitive forward current tp = 10ms sinusoidal 80 35 a t stg storage temperature range -40 to +150 c t j maximum operating junction temperature 150 c symbol parameter value unit r th(j-c) junction to case thermal resistance 3.6 c/w symbol parameter test conditions value unit t j = 25c t j = 125c typ. max. typ. max. i r * reverse leakage current damper v r = 1500 v 100 100 1000 a modul. v r = 600 v 20350 v f ** forward voltage drop damper i f = 6 a 1.5 2.3 1.25 1.7 v modul. i f = 3 a 1.8 1.1 1.4 symbol parameter test conditions value unit damper modul. typ. max. typ. max. t rr reverse recovery time i f = 100ma i r =100ma i rr = 10ma t j = 25c 625 110 350 ns i f = 1a di f /dt = -50 a/s v r =30v t j = 25c 95 125 35 50 obsolete product(s) - obsolete product(s)
dmv1500h 3/8 table 7: turn-on switching characteristics symbol parameter test conditions value unit typ. max. t fr forward recovery time damper i f = 6 a di f /dt = 80 a/s v fr = 3 v t j = 100c 350 ns modul. i f = 3 a di f /dt = 80 a/s v fr = 2 v t j = 100c 240 v fp peak forward voltage damper i f = 6 a di f /dt = 80 a/s t j = 100c 18 25 v modul. i f = 3 a di f /dt = 80 a/s t j = 100c 8 figure 1: power dissipation versus peak forward current (triangular waveform, =0.45) figure 2: average forward current versus ambient temperature figure 3: forward voltage drop versus forward current (damper diode) figure 4: forward voltage drop versus forward current (modulation diode) p (w) f(av) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 damper diode modulation diode i (a) p 0 1 2 3 4 5 6 7 0 25 50 75 100 125 150 i (a) f(av) damper diode modulation diode r= th(j-a) r th(j-c) r= th(j-a) r th(j-c) t (c) amb t =tp/t tp 0 5 10 15 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 i (a) fm v (v) fm t =125c (typical values) j t =125c (maximum values) j t =25c (maximum values) j 0 1 2 3 4 5 6 7 8 9 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 i (a) fm v (v) fm t =125c (typical values) j t =25c (maximum values) j t =125c (maximum values) j obsolete product(s) - obsolete product(s)
dmv1500h 4/8 figure 5: relative variation of thermal impedance junction to case versus pulse duration figure 6: non repetitive peak forward current versus overload duration (damper diode) figure 7: non repetitive peak forward current versus overload duration (modulation diode) figure 8: reverse recovery charges versus di f /dt (damper diode) figure 9: reverse recovery charges versus di f /dt (modulation diode) figure 10: peak reverse recovery current versus di f /dt (damper diode) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 z/r th(j-c) th(j-c) t (s) p damper diode modulation diode single pulse 0 5 10 15 20 25 30 35 1.e-03 1.e-02 1.e-01 1.e+00 i (a) m t =25c c t =75c c t =125c c t(s) i m t =0.5 0 5 10 15 20 25 30 1.e-03 1.e-02 1.e-01 1.e+00 i (a) m t =25c c t =75c c t =125c c t(s) i m t =0.5 0 200 400 600 800 1000 1200 0.1 1.0 10.0 q (nc) rr di /dt(a/s) f i= t =125c 90% confidence f j i p 0 50 100 150 200 0.1 1.0 10.0 100.0 q (nc) rr di /dt(a/s) f i= t =125c 90% confidence f j i p 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0.1 1.0 10.0 i (a) rm di /dt(a/s) f i= t =125c 90% confidence f j i p obsolete product(s) - obsolete product(s)
dmv1500h 5/8 figure 11: peak reverse recovery current versus di f /dt (modulation diode) figure 12: transient peak forward voltage versus di f /dt (damper diode) figure 13: transient peak forward voltage versus di f /dt (modulation diode) figure 14: forward recovery time versus di f /dt (damper diode) figure 15: forward recovery time versus di f /dt (modulation diode) figure 16: relative variation of dynamic parameters versus junction temperature 0.0 1.0 2.0 3.0 4.0 5.0 6.0 1 10 100 1000 i (a) rm di /dt(a/s) f i= t =125c 90% confidence f j i p 0 5 10 15 20 25 30 35 40 0 20 40 60 80 100 120 140 v (v) fp di /dt(a/s) f i= t =125c 90% confidence f j i p 0 1 2 3 4 5 6 7 8 9 10 11 12 0 20 40 60 80 100 120 140 160 180 200 v (v) fp di /dt(a/s) f i= t =125c 90% confidence f j i p t (ns) fr 300 350 400 450 500 550 600 650 700 750 800 0 20 40 60 80 100 120 140 i= t =125c v 90% confidence f j i =3v p fr di /dt(a/s) f 0 25 50 75 100 125 150 175 200 0 20 40 60 80 100 120 140 160 180 200 t (ns) fr i= t =125c v 90% confidence f j i =2v p fr di /dt(a/s) f 0.0 0.2 0.4 0.6 0.8 1.0 1.2 25 50 75 100 125 q rr t (c) j v fp i rm i,v,q [t]/ rm fp rr j i , v , q [t =125c] rm fp rr j obsolete product(s) - obsolete product(s)
dmv1500h 6/8 figure 18: to-220fpab package mechanical data figure 17: junction capacitance versus reverse voltage applied (typical values) 1 10 100 1 10 100 1000 c(pf) v (v) r f=1mhz v =30mv t =25c osc rms j damper diode modulation diode ref. dimensions millimeters inches min. max. min. max. a 4.4 4.9 0.173 0.192 b 2.5 2.9 0.098 0.114 d 2.45 2.75 0.096 0.108 e 0.4 0.7 0.016 0.027 f 0.6 1 0.024 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.205 g1 2.4 2.7 0.094 0.106 h 10 10.7 0.393 0.421 l2 16 typ. 0.630 typ. l3 28.6 30.6 1.126 1.205 l4 9.8 10.7 0.385 0.421 l6 15.8 16.4 0.622 0.646 l7 9 9.9 0.354 0.390 dia. 2.9 3.5 0.114 0.138 obsolete product(s) - obsolete product(s)
dmv1500h 7/8 figure 19: to-220fpab f5 bending (option) package mechanical data table 8: ordering information part number marking package weight base qty delivery mode dmv1500hfd dmv1500h to-220fpab 2.4 g 50 tube DMV1500HFD5 dmv1500h to-220fpab f5 2.4 g 45 tube table 9: revision history date revision description of changes 07-sep-2004 1 first issue ref. dimensions millimeters inches min. max. min. max. a 4.4 4.9 0.173 0.192 b 2.5 2.9 0.098 0.114 d 2.45 2.75 0.096 0.108 e 0.4 0.7 0.016 0.027 f 0.6 1 0.024 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.205 g1 2.4 2.7 0.094 0.106 h 10 10.7 0.393 0.421 l2 16 typ. 0.630 typ. l3 24.16 26.9 0.951 1.059 l4 1.65 2.41 0.065 0.095 l6 15.8 16.4 0.622 0.646 l7 9 9.9 0.354 0.390 m1 2.92 3.3 0.115 0.130 r 1.4 typ. 0.055 typ. dia. 2.9 3.5 0.114 0.138 obsolete product(s) - obsolete product(s)
dmv1500h 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com obsolete product(s) - obsolete product(s)
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